Qubits made by advanced semiconductor manufacturing

Full-scale quantum computers require the integration of millions bits. The promise leveraging industrial semiconductor manufacturing to meet this requirement has fueled pursuit computing in silicon dots. However, date, their fabrication relied on electron-beam lithography and, with few exceptions, academic style lift-off processes. Although these techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether processing conditions developed fab environment enable high yield, throughput, uniformity transistors are suitable for dot arrays do not compromise delicate qubit properties. Here, we demonstrate dots hosted at a 28Si/28SiO2 interface, fabricated 300 mm facility using all-optical fully processing. As result, achieve nanoscale gate patterns remarkable homogeneity. well-behaved multi-electron regime, excellent tunnel barrier control, crucial feature fault-tolerant two-qubit gates. Single-spin operation magnetic resonance reveals relaxation times over 1 s Tesla coherence 3 ms, matching quality spin qubits reported date. feasibility high-quality made fully-industrial strongly enhances prospects large-scale computer